FOREWORD

The Proceedings contain mostly reports, delivered at the IEP’96 and approved by the Conference Organizing Committee. Additionally, several reports, for same reasons having not been included into the conference program, are also published. The presented materials correspond to the Institute’s sphere of interest. The materials are printed by direct reproduction technique, therefore the authors are responsible for the possible errors.

Naukowi praci (Proceedings, Edited by A.N. Zavilopulo, L.O. Bandurina, V.T. Masluyk, I.P. Zapesochny, Z.Z. Torich and A.N. Gomonai , IEP Uzhgorod, 1996, 292 pp.)

CONTENTS

R.Minea, C.Oproiu, S.Pascanu . Some considerations about the
use of electron accelerations for food irradiation at the electron
accelerator laboratory.........................................................................8

Yu.Il.Tyagur The tricritical Lifshitz point line in
photoferrosemiconductors of  (Pb y Sn 1- y ) 2 P 2 (Se x S 1- x ) 6 .......................10

E.Remeta, A.Borovik . Semi-empirical calculations of three-electron
configurations in K - ............................................................................12

B.M.Hunda. Optical properties and luminescence of lithium
tetraborate activated with various dopants...........................................17

M.V.Tkach, V.A.Holovatsky, O.M.Voytsekhivska, M.Ya.Minkova .
The electron spectrum in nanodimensional spherical semiconductor
CdS/HgS/H 2 O heterostructures .........................................................24

V.M.Simulik, I.Yu.Krivsky . A classical electrodynamical model
of the hydrogen atom..........................................................................27

S.S.Krafchik, A.V.Lada, R.B.Kryklyvets, L.G.Romanova .
Doped arsenic sulphide of extra high purity for optical coatings............32

G.G.Bogachov . New lines in cadmium emission spectra excited
by electron-atomic collisions...............................................................36

A.Borovik, V.Krasilinec . Electron impact excitation of autoionizing
states in lithium atoms..........................................................................40

V.Bunda, S.Bunda, O.Parlag, A.Okunyev, V.Slivka, S.Matas,
M.Timko, M.Mihalik, Y.Kovac, V.Kavecansky, I.Sargancova .
Magnetic properties of electron-irradiated Y 1 Ba 2 Cu 3 O 7- s ceramics.....44

B.M.Hunda, P.P.Puga . IBM PC-based technique for experimental
setups automation...............................................................................48

I.G.Megela, D.B.Goyer, Yu.I.Hutych, Ye.Yu.Brailovsky .
Scattering mechanisms studies in irradiated semiconductors by
measurement of free-carrier optical absorption....................................53

N.V.Holdovska, I.I.Dudych, O.I.Derhalyov . National Service
of Unique Time and Standard Frequencies of Ukraine and the
development of its Transcarpathian Branch..........................................58

Yu.V.Hudyma, D.D.Nykyrsa, L.F.Politansky . Thermal mode of
power MOS transistors with vertical structure......................................62

V.I.Sakhno . Application of electrophysical technique and facilities for
sea products processing.......................................................................66

M.K.Hrebenyuk . Extension of laser application in school
experimental demonstrations................................................................68

M.I.Haysak. M.M.Dovhanich . Description of angular correlations
in helium-like systems..........................................................................72

Yu.M.Dashkevich, I.Yu.Roman,. I.M.Nekrasova, M.I.Dashkevich .
Studies of iron ions effect upon the morphology of caesium
dihydroarsenate...................................................................................79

O.B.Shpenik, A.I.Imre, I.V.Chernyshova, J.E.Kontros .
Elastic monoenergetic electron back-scattering for Mg + ion..................83

L.O.Bandurina, M.M.Dovhanich, M.I.Haysak, O.I.Zatsarinny .
Contribution of autoionizing states in cross-section of two-photon
ionization of magnesium.......................................................................88

V.Bunda, S.Bunda, V.Butorin, V.Tsyhyka, V.Krivsky, V.Slivka .
Hybride contact structures "high-temperature superconductor–
semiconductor" as polyfunctional elements for cryophotoelectronics.....93

R.Mariychuk, V.Bunda, O.Semrad, V.Slivka. T c >110 K in
Y-Ba-Cu-O system at the specific conditions of synthesis....................98

R.T.Mariychuk, O.O.Semrad, A.M.Solomon . Quantitative X-ray
phase analysis for Y-Ba-Cu-O-F system...........................................104

V.Bunda, R.Mariychuk, S.Bunda, A.Kun, S.Kun, O.Semrad,
A.Solomon, P.Puga. Reproducible superconductivity in fluorated
Y-Ba-Cu-O and Bi-Pb-Sr-Ca-Cu-O systems...................................107

D.I.Povesma, I.O.Zapfel . On the mathematical processingof threshold
dependences of ionization functions of atoms and molecules...............113

M.V.Tkach, V.P.Zharkoy, O.M.Makhanets. Electron-phonon
coupling in semiconductor quantum wires...........................................118

A.I.Imre, V.S.Vukstich, A.N.Gomonai, A.N.Nemeth,
M.V.Kolozhvari . Inelastic collisions of electrons with Cd + ions..........122

N.M.Erdevdy, O.B.Shpenik, T.Yu.Popik . Slow electron scattering
by the Si surface and condensed Mg films..........................................127

I.E.Barchiy, Ye.Yu.Peresh, M.Yu.Sabov, V.I.Sidey.
Complex chalcohalogenide and halogenide compounds dissociation
parameters........................................................................................132

L.Bandurina, O.Zatsarinny . The ejected-electron spectra following
inner-shell ionization and excitation of laser-excited Na atoms
by electron impact............................................................................137

I.P.Zapesochny . Photon spectroscopy as a powerful technique
for studying inelastic processes at the non-pair collisions of electrons,
atoms and ions.................................................................................142

V.P.Starodub, V.A.Serdyuk . Calculation of KrF plasma-dynamic
laser optimal parameters..................................................................150

V.S.Vukstich, O.I.Zatsarinny, Yu.V.Zhmenyak . Studies of
ultrasoft X-ray emissions at the excitation of thallium atom O-shell
by electron impact...........................................................................154

I.V.Pronyshyn, V.V.Pazyuk, O.M.Makhanets . Quasiparticle
spectrum in quantum wires...............................................................158

O.I.Zaika, Yu.V.Kibkalo, A.I.Lengyel, O.I.Parlag, D.I.Sikora,
V.A.Pylypchenko . The peculiarities of the dependence of actinide
nuclei fission fragments mass distributions on the excitation energy
at the fixed value of the introduced angular momentum......................162

F.F.Telychko . Variability of the absorptive ability of biosystem
microstructures................................................................................167

V.T.Maslyuk, A.V.Lada, P.P.Puga, A.A.Doriy, V.V.Maslyuk .
Simulation of x- and z-gradient structures of functional electronics.....173

V.T.Maslyuk, T.Y.Marynets, Ye.I.Charnovych, O.O.Parlag,
D.I.Sikora . Description of mass and charge distribution of heavy
nuclei fission fragments in the framework of colour statistics...............177

Yu.V.Zhmenyak, V.A.Kelman, A.S.Rybak, Yu.O.Shpenik .
On the possibility of cw lasing action from the 3p[1/2] 0 –3s[1/2] 1
(585.3 nm) electron transition of atomic neon in gas discharge...........181

O.I.Gomonai . Radiative deacy of the autoionizing state at the
three-photon ionization of ytterbium atom..........................................186

I.Yu.Krivsky, V.M.Simulik, Z.Z.Torich . Relativistic invariance
of curl subsystem of Maxwell’s equations and generalizations.............190

I.Yu.Krivsky, V.M.Simulik. On the additional Clifford-Dirac algebra..194

L.L.Shimon, O.K.Shuaibov, I.V.Shevera . The studies of the positive
corona discharge characteristics in the operating media of KrCl and
XeCl lasers.......................................................................................199

I.I.Opachko . On the thermal conductivity of materials formed
of a multicomponent powder mixture.................................................204

I.I.Opachko . The specific features of the effect of a periodic laser
pulse train upon the solid surface........................................................207

V.V.Suran, I.I.Bondar, M.I.Dudich . Formation of doubly-charged
Ba ions in the spectral range 17800–18700 cm -1 ................................211

I.S.Virt, D.I.Tsyutsyura . The photoconductivity of non-uniform
narrow-gap semiconductors...............................................................216

V.M.Mazur, Z.M.Bigan, M.V.Hoshovsky, S.I.Sychov, I.V.Sokolyuk.
Population of isomeric states of 0 - and 8 - europium-152 nucleus
in ( g , n) reactions..............................................................................219

P.M.Milyan, O.O.Semrad, S.V.Kun, Yu.V.Voroshilov, A.M.Solomon .
The investigation of PbO–Sb 2 O 3 systems and the properties
of PbSb 2 O 4 intermediate phase.........................................................224

P.M.Milyan, O.O.Semrad, S.V.Kun, A.M.Solomon, P.P.Puga .
Phase equilibria in Hg-Sb-O ternary ystem........................................229

M.I.Holovey, V.M.Holovey, V.I.Tkachenko . Obtaining single
crystals for electronic engineering......................................................234

M.I.Holovey, V.M.Holovey . The effect of temperature fluctuations
on the trapping bands formation at the growth of paratellurite single
crystals.............................................................................................239

Yu.Yu.Bilak, E.Yu.Remeta . Theoretical description of the
experimental investigation of slow electron elastic scattering by
Ca atom by using a trochoidal electron monochromator.....................244

Ye.P.Sabad, V.I.Kelemen, E,Yu.Remeta. Elastic scattering of
electrons by atoms with semi-occupied shells....................................249

D.I.Sikora, S.I.Sychov . On the influence of the equilibrium
quadrupole deformations on the alpha-decay of heavy nuclei.............254

V.R.Kozubovskii . The phase-frequency methods in absorption
spectroscopy...................................................................................259

I.I.Opachko, L.L.Shimon . The peculiarities of the influence of
pulse-periodic picosecond emission of copper vapour laser upon the
surface.............................................................................................263

S.Yu.Medvedyev, F.F.Telychko . The investigation of the structural
distribution of X-ray and gamma-radiation absorption by a biosystem..268

V.M.Holovey, Yu.M.Azhniuk, A.V.Gomonnai, D.B.Goyer,
I.G.Megela, V.V.Lopushansky . The studies of oxygen vacancies
formation conditions in paratellurite single crystals................................273

D.B.Goyer, I.G.Megela, E.M.Sheregii . Electron irradiation effect
upon Cd x Hg 1- x Te crystals electrical properties....................................278

J.Kontros, A.Lengyel . On the oscillations of the diffraction cone.........282



 
FOREWORD

The international conference "Material Science and Material Properties for Infrared Opoelectronics" is devoted to the fundamental and applied scientific problems of materials being used in optoelectronic devices operating in the infrared spectral range, their application having rapidly grown through the recent years. The papers reported at the conference concerned various aspects of infrared optoelectronic device applications (section A), characterization and properties of the materials being used or promising for the infrared optoelectronics (section B), scientific and technological aspects of the semiconductor growth techniques (section C).

Material Science and Material Properties for Infrared Opoelectronics ( Proceedings , Uzhgorod, 1996, 163 pp.)

CONTENTS

AI-1.
Performance of HgCdTe, InGaAs and quantum well GaAs/AIGaAs
staring infrared focal plane arrays
L. Kozlowski , Rockwell International, California, USA

AI-2.
Infrared photon detectors versus thermal detectors
A. Rogalski , Institute of Applied Physics, Military University of Technology,
Warsaw, Poland

AI-3.
Silicon structures with surface doping sensitive to the near-IR radiation
V. Litovchenko , Institute of Semiconductor Physics, Kiev, Ukraine

AI-4.
Pb 1-x Sn x Se-on-Si: Material and IR-device properties
H. Zogg. A. Fach, J. John. P. Muller, C. Paglino, A. N.Tiwari,
Swiss Federal Institute of Technology at Zurich, Zurich, Switzerland

AI-5.
Recent progress in the study, characterization, and properties of HgCdTe
at National Laboratory of Infrared Physics in China
Junhao Chu , NLIP, Shanghai. China

AI-6.
HTSC infrared detectors
V. G. Efremenko , Institute for Low Temperature Physics and Engineering,
Kharkov. Ukraine

Oral presentations

A-1.
Quantum magnetotransport in two-dimentional electron gas in
InGaAs/InP heterostructures ' B. Podor 1 , I. G. Savel’ev 2 , Gy. Kovacs 3 ,
G. Remenyl 4 ,G. Gombos 1 , A.M. Kreshchuk 2 , S. V. Novikov 2
1 Research Institute of Technical Physics, Hungarian Academy of Scicnces,
Budapest, Hungary 2 loffe Physical-Technical Institute, St. Petersburgh, Russia
3 Eotvos Lorand University, Budapest, Hungary 4 CNRS. Grenoble, France

A-2.
Novel photovoltaic and bicolour GaAs/AlGaAs quantum well infrared detector
Z.-H.Chen, Z.-N.Yuan, J.-W.Ma, D.-F.Cui , Institute of Physics, Beijing.
People’s Republic of China

A-3.
Injection-amplification IR-photodiodes
Sh. Kurmashev, V. Stafeev, I. Vikulin, A Sofronkov , Odessa State University,
Odessa, Ukraine; Orion, Moscow, Russia

A-4.
Light and electric field influence on resistivity and long-term relaxation
of piezoresistivity in p-GaAs/AI 0.5 Ga 0.5 As
E. V. Bogdanov, 1 K. I, Kolokolov, 1 V. N. Kravchenko, 1 N. Ya. Minina,
1 A. M. Savin, 1 O. P. Hansen, 2 and J. S. Olsen, 2 1 Moscow State University,
Moscow, Russia 2 Niels Bohr Institute, Copengagen, Denmark

A-5.
Acoustooptic modulator for fibre optic gas sensor based on midwave
InGaAsSb/InAsSbP diode laser
B. A. Matveev, N. V. Zotova, S. A. Karandachov, L. A. Kulakova,
B. T. Melekh, N. M. Stus,G. N. Talalakin , Ioffe Physical-Technical institute,
St. Petersburgh, Russia

A-6.
Far IR photoelectric pbenomenon in gapless Hg 1-x Hg x Te with induced energy gap
S. G. Gasan-Zade, E. A Salkov, G. A Shepelskij ,Institute of
Semiconductor Physics, Kiev, Ukraine

A-7.
Ferroelectric-semiconductor based pyroelectric sensors with improved
dynamic pyroelectric function
S. L. Bravina, N. V. Morozovsky , Institute of Physics, Kiev, Ukraine

A-8.
Study of the correlation between crystal defects and properties of CdTe:
Ge radiation detectors
P . Feichuk, 1 L. Scherbak, 1 D. Pljuta, 1 P. Moravec, 2 J. Franc, 2
E. Belas, 2 P.Hoschl. 2 1 Chernivtsy State University, Chernivtsy, Ukraine,
2 Instilute of Physics, Charles University, Prague, Czech Republic

A-9.
Characterisation of p-n HgCdTe diffusion photodiodes and linear arrays with
silicon CCD readout circuits
S. D. Darchuk, F. F. Sizov, V. V. Tetvorkin , Institute of Semiconductor Physics,
Kiev. Ukraine V. P. Reva, Yu. P. Derkach . Institute of Microdevices. Kiev. Ukraine

A-10.
Lifetimes of charge carricrs in Hg 1-x Cd x Te structures grown by MIBE method
A.V. Voitsekhovskii, A.P. Kokhanenko, Y.A. Denisov, Y.G. Sidorov.
S.A. Dvoretsky, N.N. Mikhailov , Tomsk State University, Tomsk. Russia

A-11.
Photoelectric properties of Pb 1-x-y Ge x Sn y Te:In epitaxial films
V. F. Chishko 1 , A. I. Dirotchka 1 , I. L. Kosatkin 1 , A. G. Moisseenko 2 ,
V.N. Vasil’kov 1 1 State Researh Centre "Orion", Moscow. Russia
2 Moscow Institute of Physics and Technology, Moscow, Russia

Poster presentations

AP-l.
Nonlinear optical processes in the GaAs-GaP planar gradient waveguides:
computer simulation
V. G. Voevodin, O. V. Leontieva , Siberian Physical-Technical Institute
at Tomsk State University, Tomsk. Russia

AP-2.
Laser pulse correcting 2D Pearson-IV ion-implanted impurity profiles near
the oxidal defence mask boundary for creating matrix CdHgTe infrared detector
L. S. Monastyrsky, O. Ivanel, Yu. Sokyrka, I. Olenych, R. Kovtun ,
Lviv State University, Lviv, Ukraine

AP-3.
Asymmetry of response of photopyroelectric conversion, low frequency
resonance phenomena and new potentialities of polymer based sensors
S. L. Bravina, N. V. Morozovsky , Institute of Physics, Kiev, Ukraine
J. Kulek, B. Hilczer , Institute of Molecular Physics, Poznan, Poland

AP-4.
Antireflective coatings for infrared fibres
T. N. Shchurova, N. D. Savchenko, N. Yu. Baran , Uzhgorod State University,
Uzghorod, Ukraine

AP-5.
Immersion transition layers based on complex chalkogenides for
optoelectronic switches
N. Dovgoshey, A. Kondrat, I. Kacher, N. Savchenko, L. Durdinets ,
Uzhgorod State University, Uzghorod, Ukraine

AP-6.
Peculiarities of detecting of radiation from small emitters
E. A. Salkov 1 , G. S. Svechnikov 2 , N. M. Krolevets 1 ,
1 Institute of Semiconductor Physics, Kiev, Ukraine 2 Singapore Polytechnic,
Singapore

AP-7.
The enlarge of diapason of sensitivity PET in IR-area
Ya. S. Budzak, V. Yu. Erohov, O. V. Korovin, I. I. Melnyk ,
Lviv Polytechnic State University, Lviv, Ukraine

AP-8.
Investigation of MIS-structures on Mn x Hg 1-x Te
A. V. Voitsekhovskii, O. G. Lanskya, E. P. Lilenko, V. I. Kalenik ,
Tomsk State University, Tomsk, Russia

AP-9.
The characterization of Hg 1-x Zn x Te anodic oxide-metal structures
A. V. Voitsekhovskii, O. G. Lanskay, E. P. Lilenko, V. I. Kalenik ,
Tomsk State Universitr, Tomsk. Russia

AP-10.
The nature of photosensitivity of structure on the basis of lead sulphide
S. I. Andreev, M. I. Kamchatka. Ju. M. Chashchinov, D. B. Chesnokova ,
St.Pelersburgh State Electrotechnical University,St.Petersburgh, Russia.

AP-11.
Lifetimes of non-equilibrium charge carrier in Cd x Hg 1-x Te graded-band-gap
epitaxial layers
V. K. Pysarevsky , Institute of Applied Physics, Lviv University, Lviv,Ukraine

AP-12.
Peculiarities of CdSb application as intrared filters
I. M. Rarenko, V. N. Strebezhev, S. M. Kulikovskaya, S. G. Dremluzhenko ,
O.N. Krylyk, B. A. Martynyuk . Chernivtsy State University, Chernivtsy, Ukraine.

AP-13.
Solution of the semiconductor charge transfer equation using extended double-sweep technique
G. V. Beketov , Institute of Semiconductor Physics, Kiev, Ukraine

AP-14.
Photoluminescence and Raman scattering in In 0.53 Ga 0.47 As/InP:Dy
B. Podor 1 , D. Vignaud 2 , I. M. Tiginyanu 3 , L. Csontos 1 , V. V. Ursaki 3 ,
V.P. Shontya 4 1 Research Institute of Technical Physics, Hungarian Academy
of Sciences, Budapest, Hungary 2 Universite de Lille, Villeneuve d'Ascq, France
3 Institute of Applied Physics, Kishinev, Moldova 4 Technical University of
Moldova, Kishinev, Moldova

AP-15.
1.54 m m photolumincsccnce of erbium-doped silicon
M. I. Makovijchuk, E. O. Parshin , Institute of Microelectronics, Yaroslavl, Russia
N. A Sobolev, M. S. Bresler, O. V. Gusev, E. I. Shek , Ioffe Physical-Technical Institute, St.Petersburgh, Russia

AP-16.
Acoustooptical materials as the means of information optical processing
in the infrared diapason
O. V. Bogdanova, V. M. Borets, K. Z. Rushchansky, V. I. Fedelesh,
V. K. Kirilenko - Uzhgorod Oplical Information Department of the
Institute of Information Recording Problems of NASU, Uzhgorod, Ukraine

AP-17.
The new principles of optical recording of information in nonmetal
and molecular organic compounds
O. V. Bogdanova, V. M. Borets, V. V. Petrov, A. A. Kryuchin, V. G.,
Pitsyuga, I. S. Gorban, E. I. Gladyshevsky, O. I. Bodak ,
Uzhgorod Optical Information Department of the Institute of Information
Recording Problems of NASU, Uzhgorod, Ukraine

AP-I8.
New method for recording of heterogeneous processes on semiconductor
surface by photoemulsion
A. I. Elizarov, A. V. Sukachov, V. M. Kuts, Kremenchuk Branch of
Kharkov Polytechnical University, Kremenchuk, Ukraine

AP-19.
LPE AlGaAs/GaAs photodetectors for space application
E. F. Venger, A. V. Prokhorovich, G. N. Semenova, T. G. Kryshtab,
A. V.Svitelskiy , Institute of Semiconductor Physics, Kiev, Ukraine
S. I. Krukovskii , Carat Scientific Prod. Ass., Lviv, Ukraine

AP-20.
New typc sources of IR emission based on complex narrow-gap semiconductors
S. S. Bolgov, V. K. Malyutenko, A. P. Savchenko , Institute of Semiconductor
Physics, Kiev, Ukraine

AP-21.
Semiconductor materials as optical media for infrared optoelectronics
I. M. Nesmelova, -State Institutc of Applied Optics, Kazan, Russia

AP-22.
Tunnel surface recombination in optoelectronic device modelling
A. A. Ptashchenko, F. A. Ptashchenko , Odessa University, Odessa, Ukraine

AP-23.
Epitaxial layer’s CdHgTe stress inlluence on diffusion impurities under
creating IR photodetectors
L. Monastyrsky, O. Ivanel, Yu. Sokyrka, I. Olenysh, R. Kovtun ,
Lviv State University, Lviv, Ukraine

AP-24.
Specific "quantity of chaos" in photodetecting
E. A. Salkov , Institute of Semiconductor Physics, Kiev, Ukraine

AP-25.
Sensitivity of 2-dimensional electron gas to far intrared radiation
A. Dmitriev, Z. Kovalvuk, G. Lashkarev , Institute for Problems
of Materials Sciences, Kiev, Ukraine

AP-26.
Optimisation of technology and parameters of photoreceivers based
on PbSnTe thin layers
D. Freik, V. Chobanyuk, G. Dobrovolska,V. Shepetyuk , Stefanyk’s
Precarpathian University, Ivano-Frankivsk, Ukraine

AP-27.
II-VI thin-film polycrystalline multilayer converters
V. N. Komashchenko, S. Yu. Pavelets, A. V. Komashchenko ,
Institute of Semiconductor Physics, Kiev, Ukraine

AP-28.
Investigation of the IR radiation of hot holes from uniaxial deformed germanium
A. A. Abramov, A. T. Dalakyan , Donbass-State Machine-Building
Akademy Kramatorsk, Ukraine
V. N. Tulupenko , Kiev Shevchenko University, Kiev, Ukraine

AP-29.
Influence of growth conditions on electrophysical properties of
Mn x Hg 1-x Te/Cd y Zn 1-y Te heterostructures
A. E. Belyaev, S. A. Vitusevich, S. M. Komirenko , Institute of Semiconductor
Physics, Kiev, Ukraine

AP-30.
Steady-state and dynamic photorefractive gratings in Sn 2 P 2 S 6 ferroelectrics
A. I. Bercha, A. A. Grabar, A. A. Grin, I. V. Kedyk, V. Yu. Sinchera, and
I. M. Sloika , Institute for Solid State Physics of the Uzhgorod State University,
Uzhgorod, Ukraine

AP-31.
Application of heterovalent systems solid solitons of III-V/II-VI type in
infrared optoelectronics
N. G. Vyalyi , N. Gogol State Pedagogical Institute, Nezhin, Ukraine

AP-32.
Nonlinear Optical Transmission of Hg 1-x Cd x Te at room temperature
A. G. Golenkov, and S. D. Darchuk , Institute of Semiconductor Physics,
Kiev, Ukraine

Characterization and Properties - Section B

Invited presentations

BI-l.
Band structure engineering of InAs for improved transport electron chararteristics.
W. T. Masselink , Humboldt University, Berlin, Germany

BI-2.
Dynamical aspects of carrier transport in quantum well intersubband
photodetectors
H. Schneider , Fraunhofer Institute fur Angewandte Festk-Furper Physik,
Freiburg, Germany

Bl-3.
Photoconductivity of semiconductor with a transverse gradient of electric field
A. Medvid , Riga Technical University, Riga, Latvia

BI-4.
Narrow - gap alloys (Pb,Sr)Se and (Pb,Eu)Se for optoelectronic devices
K. H. Herrmann , University of Kuwait, Kuwait

BI-5.
Narrow-gap diluted magnetic semiconductors as alternative material for
infrared detector applications
I. M. Rarenko , Chernivtsi State University, Chernivtsi, Ukraine
A. E. Belyaev , Institute of Semiconductor Physics, Kiev, Ukraine

Oral presentations

B- I .
The boil-off effect for holes in semimagnetic semiconductor
p-Hg 1-x Mn x Te 1-y Se y ,
N. K. Lerinman 1 , P. D. Marjanchuk 2 , A I. Ponomarev 1 , L. D. Sabirzjanova 1 ,
N. G. Shelushinina1, 1 Institute of Metal Physics, Ekaterinburg, Russia
2 Chernivtsi State University, Chernivtsi, Ukraine

B-2.
Determination ot diffusion lengths ot minority carriers in HgCdTe
by EBIC method
J. Franc 1 , E. Belas 1 , P. Moravec 1 , A. Toth 2 ,H. Sitter 3 , P. Hoschl 1 ,
1 Institute of Physics, Charles University, Prague, Czech Republic
2 Research Institute of Technical Physics, Hungarian Academy of Sciences,
Budàpest, Hungary 3 Institute of Experimental Physics, Johannes Kepler University,
Linz, Austria

B-3.
HgCdTe extended defects electrical activity characterisation by
variable-magnetic-field Hall measurements and the possibilities of their adjustmemt
N. N. Berchenko 1 , K. R Kurbanov 1 , Ya. M. Olikh 2 , A. Y. Nikiforov 1 ,
1 Lviv Polytechnic State University, Lviv, Ukraine
2 Institute of Semiconductor Physics, Kiev, Ukraine

B-4.
Raman spectroscopy of MBE-grown undoped Si-Si 1-x Gc x /(001)Si superlattices
V. P. Gnezdilov, M. Mironov, V. Yshakov , Institute for Low Temperature
Physics and Engineering Kharkov, Ukraine, O. A. Mironov, P. J. Phillips,
E. H. C. Parker , University of Warwick, Coventry, Great Britain

B-5.
Kinetics ot photoconductivity and metastable electronic states in
Pb 1-x Mn x Te(In) solid solutions
B. A. Akimov, A. V. Albul, S. V. Ponomarev, L. I. Ryabova ,
Moscow State University, Moscow, Russia

B-6.
Cryomagnetic methods ot investigation of narrow-gap semiconductor
nonperfections
M. V. Radchenko, G. V. Lashkarev , Institute for Problems of Materials Science,
Kiev, Ukraine

B-7.
Galvanomagnetic and photoelectric properties of electron-irradiated PbTe(Ga)
E. P. Skipetrov, A. N. Nekrasova, L. A. Skipetrova, L. I. Ryabova ,
Moscow State University, Moscow, Russia

B-8.
Influence of growth conditions on structure perfection of lead-tin chalcogenides
M. Bestaev, K. Gatsoev, North-Osetine State University , Vladikavkaz, Russia
A. Gorelik, V. Moshnikov , St.Petersburgh State Electrotechnical University,
St.Petersburgh, Russia.

B-9.
Low dimensional Si structures prepared by laser deposition
S. V. Svechnikov, E. G. Manoilov, E. B. Kaganovich, S. P. Dikiy ,
Institute of Semiconductor Physics, Kiev, Ukraine

B-10.
Spin effects in IR optical spectra of complex semimagnetic semiconductors
Yu. I. Mazur, G. G. Tarasov, and S. R. Lavoric , Institute of Semiconductor
Physics, Kiev, Ukraine, R. Heine, J. W. Tomm, and W. Hoerstel ,
Institute of Physics, Humboldt University, Berlin, Germany

B-11.
Influence of the depolarization effect and the non-parabolicity on the
second-harmonic gcneration spectrum in doubly resonant anisotropic
quantum well systems
M. Zaluzny , Institute of Physics, M. Curie-Sclodowska University, Lublin, Poland
V. Bondarenko , Institute of Physics, Kiev, Ukraine

B-12.
Optical methods of control and characterisation of material for infrared detectors
Yu. V. Vorobiev, V. N. Zakharchenko, R. V. Zakharchenko ,
National Technical University of Ukraine (KPI), Kiev, Ukraine

Poster presentations

BP-l.
Photoelectric peculiarities and theoretical analysis of thin semiconductor
PbS films properties prepared by new spray method
A. N. Alyoshin, A. V. Tyurin, A. V. Byrlak, V. A. Pasternak ,
Odessa State University, Scientific Research Institute of Physics, Odessa. Ukraine

BP-2.
Photovoltaic effect in graded-band-gap layers with intrinsic type of conductivity
B. S. Sokolovsky . Institute of Applied Physics, Lviv State University, Lviv, Ukraine

BP-3.
Anomalous photoconductivity in semiconductor systems
V. V. Klimenko , Dniepropetrovsk University, Dniepropetrovsk Ukraine

BP-4.
Energy spectrum of irradiation-induced defects in Pb 1-x Sn x Te
E. P. Skipetrov, A. M. Mousalitin, A. N. Nekrasova, A. V. Ryazanov ,
Moscow State University, Moscow, Russia

BP-5.
Principles of least actions and Lagrangian equation for particles,
driving in spaces of fractional dimensions
I. P. Guk , Institute of Pulse Research and Engineering, Nikolaev, Ukraine

BP-6.
The dispersion dependence of glassy As 2 S 5 upon technology conditions
I. Rosola, A Kikineshi , Uzhgorod State University, Uzhgorod, Ukraine

EP-7.
Optical parameters of semiconductors in the region of lattice absorption
T. A. Kudykina , Institute of Semiconductor Physics, Kiev, Ukraine

BP-8.
New possibilities of Hall method for metastable centres investigation in
acousto-optical crystals
Ya. M. Olikh, R. K. Savkina , Institute of Semiconductor Physics, Kiev, Ukraine

BP-9
Hel low temperature anomalies of acoustic characteristics for GeAsSe
chalcogenide glasses
Ya. M. Olikh , Institute of Semiconductor Physics, Kiev Ukraine
S. D. Gapochenko , Kharkov Polytechnic Institute, Kharkov, Ukraine
V. P. Pinzenik , Uzhgorod State University, Uzghorod, Ukraine

BP-10.
Size quantization of the exciton in quasi-zero-dimensional structures: theory
S. I. Pokutnyi , State Marine University, Nikolaev, Ukraine

BP-11.
Size quantization of the exciton energy spectrum and determination of
its parameters in quasi-zero-dimensional structures
S. I. Pokutnyi , State Marine University, Nikolaev, Ukraine

BP-12.
Multyspectral photoelectric characteristics induced by metastable e
lectronic states in PbTe(Ga)
B.A. Akimov, A.V. Albul, S. V. Ponomarev, L. I. Ryabova ,
Moscow State University, Moscow, Russia

BP-13.
Deep levels in CdTe crystals and solid solution based on them
P. P. Beisyuk, A. V. Savitsky, V. R Burachek, K. S. Ulyanitsky ,
Chernivtsi State University, Chernivtsi, Ukraine

BP-14.
Some optical properties of CrSi 2
L. A. Ivanchenko , Institute for Materials Science Problems, Kiev,Ukraine

BP-15.
Magnetic field induced prolonged changes of electric pararmeters of
infrared MOS -photodetectors
A. V. Voitsekhovskii, V. N. Davydov, S. N. Nesmelov , Tomsk Slate University,
Tomsk, Russia

BP-16.
SiO 2 thin films for silicon plates enlightening
Ts. Kryskov 1 , V. Golonzhka 2 , A. Gubanova 1 , A. Sodeika 3 ,
1 Kamianets- Podilsky Pedagogical Institute, Kamianets-Podilsky, Ukraine
2 "Podillja" University, Khmelnytsky, Ukraine
3 University of Vilnius, Vilnius, Lithuania

BP-17.
Semiphenomenological model ot edge absorption in Hg 1-x Cd x Te alloys
V. V. Bogoboyashchiy , Joint Stock Company "Pure Metals", Svetlovodsk, Ukraine '

BP-18.
Investigation of the ZMR SOI-structures using ellipsometry
L. S. Podvalnyi , Institute of Microelectronics, Yaroslavl, Russia

BP-19.
Deep defect states in lead telluride doped with Co and Ni
V. V. Asotskiy, 1 G. V. Lashkarev, 1 M. V. Radchenko, 1 V. V. Tetyorkin, 2
1 Institute for Problems of Materials Science, Kiev, Ukraine
2 Institute of Semiconductor Physics, Kiev, Ukraine

BP-20.
Shallow donor levels in AlGaAs/GaAs semiconductor quantuum wells
A. Prudius , Chernivtsi State University, Chernivtsi, Ukraine

BP-21.
The influence of ionizing radiation on the refractive index of chalcogenide glasses .
I. V. Shpak , Uzhgorod State University, Uzghorod, Ukraine
I. V. Sokolyuk , Institute for Physics and Chemistry of Solids, Uzhgorod, Ukraine

BP-22.
The influence of temperature and pressure on the refractive index of
Ge-As-S(Se) chalcogenide glasses
I. V. Shpak , Uzhgorod State University, Uzghorod, Ukraine,
I. I. Rosola , Institute for Physics and Chemistry of Solids, Uzhgorod,Ukraine

BP-23.
Magnetooptical effect in rare-earth vanadate crystals with the structure
phase transitions
V. P. Tupichak, V. P. Yatsyshyn , Pedagogical Instilute, Drogobych, Ukraine

BP-24.
The new semiconductor for infrared devices
G. C. Grushka, A. P. Bahtinov , Chernivtsi Stale University, Chernivtsi, Ukraine

BP-25.
Influence of LO-phonons on electron spectrum in cylindrical
semiconductor nanoheterosystem
M. V. Tkach, V. P. Zharkoy, O. M. Makhanets , Chernivtsi State University,
Chernivtsi, Ukraine

BP-26.
Electron spectrum in quantum wire CdS/HgS/H 2 O
M. V. Tkach, I. V. Pronyshyn, V. V. Paziuk, O. M. Makhanets ,
Chernivtsi State University, Chernivtsi, Ukraine

BP-27.
Peculiaritics of radiative recombination in vanadium-doped CdTe crystatls
A. E. Belyaev, S. M. Komirenko, S. V. Kavertsev, L. A. Mischenko ,
Institute of Semiconductor Physics, Kiev, Ukraine

BP-28.
Percolation effects in Pb 1-x Ge x Te solid solutions
E. I. Rogacheva, V. I. Pinegin, T. V. Tavrina, and N. A. Sinelnik ,
Polytechnical University, Kharkov, Ukraine

BP-29.
Thermoconductivity of PbTe-MnTe solid solutions
E. I. Rogacheva, I. M. Krivulkin , Polytechnical University, Kharkov, Ukraine

BP-30.
Magneto-polaron effect in diluted semimagnetic semiconductors
G. G. Tarasov, S. R. Lavoric, Yu. I. Mazur. A. S. Rakitin , Institute of
Semiconductor Physics, Kiev, Ukraine
J. W. Tomm, W. Hoerstel , Institute of Physics, Humboldt University, Berlin, Germany

BP-31.
Luminescent characterisation of narrow-gap semimagnetic semiconductors
G. G. Tarasov, S. R. Lavoric, and Yu. I. Mazur , Institute of Semiconductor
Physics, Kiev, Ultraine.
J. W. Tomm, and W. Hoerstel , Institute of Physics, Humboldt University, Berlin. Germany

BP-32.
Electrophysical properties of the PbTe/PbS heterostructures
O. A. Alexandrova, R T. Bondokov, I. V. Saunin, St.Petersburgh,
Eleclrotechnical University, St.Petersburgh, Russia

BP-33.
Reflection spectrum of high-conductivity solid solutions
O. V. Vakulenko 1 , V. M. Kravchenko 1 , V. S. Staschuk 1 , O. P. Gorodnichy 2 ,
K. V. Avdonin 2 , V. A. Brodovy 1 , N. G. Vyaly 3
1 Kiev Univcrsity, Kiev, Ukraine 2 Kiev Air Force Institute, Kiev, Ukraine
3 Nezhin Pedagogical Institute, Nezhin, Ukraine

BP-34.
Parameter degradation of n-p junction of Hg 1-x Cd x Te
I. Virt, S. Belotelov, Y. Ougrin, D. Tsiutsiura , Pedagogical Institute,
Drogobych, Ukraine

BP-35.
Formation teatures of structural and physical properties of HgCdMnTe layers
V. Savitsky, L. Mansurov, V. Kavych, O. Storchun, M. Lozynska ,
Institute of Applied Physics, Lviv State University, Lviv, Ukraine

BP-36.
Electrophysical and optical properties of delta-doped superlattices in
MBE-grown GaAs
Yu. G. Sadofev , Scientific Research and Technology Institute, Ryazan, Russia

BP-37.
Conductivity of the tunnel-coupled quantum wells under intersubband pumping
Yu. N. Soldatenko , Institute of Semiconductor Physics, Kiev, Ukraine

BP-38.
2D-electron systems in insulator- Cd x Hg 1-x Te interfaces
Sh. Kurmashev, A Gradoboev , Odessa State University, Odessa, Ukraine

BP-39.
HgCdTe-based radiative coolers
A. I. Liptuga, V. K. Malyutenko, V. I. Pipa , Institute of Semiconductor Physics,
Kiev, Ukraine

BP-40.
Magnetic-field-induced insulator-metal-insulator transitions in the
quantum Hall effect regime (or p-Ge/Ge 1-x S x , heterostructures
Yu. G. Arapov, G. I. Hanxs, V. N. Neverov, N. G. Shelushinina ,
Institute of Metal Physics, Ekaterinburg, Russia
O. A. Kuznetsov , Nizhny Novgorod State University, Nizhny Novgorod, Russia

BP-41.
The stress relaxation in annealed and implanted SiGe layers
M. Ya. Valakh, B. N. Romanvuk, V. V. Artamonov, N. I. Klyui ,
Institute of Semiconductor Physics, Kiev, Ukraine
A. Perez-Rodriguez, L. Calvo-Barrio, C. Serre, J. R Morante ,
University of Barcelona, Barcelona, Spain
B. Dietrich , Institute fur Halbleiterphysik, Frankfurt, Germany

BP-42.
Optical-refractometric criterion of non-metality of materials with narrow
many-particle pseudoslit
O. M. Borets , Uzhgorod Optical Information Department of the Institute of
Information Recording Problems of NASU, Uzhgorod, Ukraine

BP-43.
Abnormal diamagnetizm of solid solution (InSb) 1-x (CdTe) x at low tempcratures
A.V. Brodovoi, V. A. Brodovoi, N. G. Vyaliy, L. M. Knorozok,
V. G. Kolesnichenko , Institute for Problems of Materials Science, Kiev, Ukraine

BP-44.
Calculations of photoelectric amplification coeffcient in graded-band-gap
photoresistors
V. G. Savitsky, B. S. Sokolovsky, O. V. Nemolovsky , Institute of Applied
Physics, Lviv State University, Lviv, Ukraine

BP-45.
Investigations of transport phenomena in narrow-gap semiconductors
G. V. Lashkarev, M. V. Radchenko, V. V. Asotskiy, V. M. Frasunyak ,
Institute for Problems of Materials Science, Kiev. Ukraine

BP-46.
On the non-parabolicity effect upon the elcctron mobility in PbTe/PbSnTe
quantum wells
V. V. Bondarenko , Institute of Physics, Kiev, Ukraine

BP-47.
Study of CdTe solid solution as substrates for epitaxial structures CdHgTe
Z. I. Zakharuk, Yu. P. Stetsko, I. M. Rarenko, V. L. Shlyakhovuy,
Chernivtsy State University, Chernivtsy, Ukraine

BP-48.
Modification of defect structure and properties of Cd x Hg 1-x Te semiconductors
by lazer pulses
V. A. Gnatyuk, P. E. Mozol , Institute of Semiconductor Physics, Kiev, Ukraine
O. S Gorodnychenko , Kiev Shevchenko University, Kiev Ukraine
V. V. Borshch , Poltava Pedagogical Institute, Poltava. Ukraine

BP-49.
Irreversible gigantic modifcation of semiconductor optical properties
A.M. Kamuz, P.F. Oleksenko,and T.A. Dyachenko ,
Institute of Semiconductor Physics, Kiev,Ukraine

BP-50.
Deposition technique and external factors effect on Ge 33 As 12 ,zSe 55 -Si
heterostructure mechanical properties
A. Kondrat, N. Savchenko, M. Trunov, T. Shchurova, V. Onopko ,
Uzhgorod State University, Uzghorod, Ukraine

BP-51.
Electron-induced physical properties changes in amorphous
Ge-As(Sb)-Se films
N. D. Savchenko, T. N. Shchurova, N. I. Dovgoshey , Uzhgorod State University,
Uzghorod, Ukraine

BP-52.
Structural properties of PbTe films on porous silicon substrates
D. S. Zimin , Yaroslavl University, Yaroslavl, Russia
R. Ts. Bondokov , St.Petersburgh Elect. Eng. University, St.Petersburgh, Russia

BP-53.
Electron spectrum in spherical semiconductor nanoheterostructures
CdS/HgS/H 2 O
M. V. Tkach, V. A. Holovatsky, O. M. Voitsekhivska, M. Ya. Min’kova ,
Chernivtsi State University, Chernivtsi, Ukraine

BP-54.
Band-Offset, Inter- and Intra-Band Absorption in Type II IV-VI Superlattices
V. V. Zabudsky, I. V. Gumenjuk-Sichevskaya, V. V. Teterkin , Institute of
Semiconductor Physics, Kiev, Ukraine

BP-55.
Interconsistent Band Structure of Narrow-Gap HgCdTe Alloys Obtained with
Taking into Account of Far Band Influence
V. Bogoboyashchiy , Joint Stock Company "Pure Metals", Svetlovodsk, Ukraine

BP-56.
Influence of Nanosecond Laser Irradiation on Photoelectrical Properties
of Hg 1-x Mn x Te
E. P. Kopishinskaya 1 , P. E. Mozol 1 , I. M. Rarenko 2 , and A. I. Vlasenko 1
1 Institute of Semiconductor Physics, Kiev, Ukraine,
2 Chernivtsi State University, Chernivtsi, Ukraine

Semiconductor Growth Techniques for IR Optoelectronic Devices -Section C

Invited presentations

CI-1.
MBE growth of lead salt compounds
G. Springholz , University of Linz, Austria

CI-2.
Diffusion of mercury into cadmium telluride
M. U. Ahmed, E. D. Jones , Coventry University, Coventry,
J. B. Mullin , EMC "The Hoo", Worcs,
N. M. Stewart , BT Research Laboratories, Ipswich, Great Britain

CI-3.
Delta doping structures in Si and SiGe layers - applications in devices
and material science
D. Kruger, H. P. Zeindl , Institute of Semiconductor Physics,
Frankfurt (Oder), Germany

CI-4.
Epitaxial growth and structural properties of II-VI Te-based semiconductors.
E. Dieguez, N. Sochinski , Universty, Madrid, Spain

CI-5.
Modification ot HgCdTe properties by powerful pulsed laser irradiation
V. Savitsky , Institute of Applied Physics, Lviv University, Lviv, Ukraine

Oral presentcrtions

C-1.
The epitaxial growth of IV-VI superlattices on (001)Si
A.I. Fedorenko,A.G. Fedorov, A.Yu. Sipatov , Kharkov
StatePolytechnic University, Kharkov,Ukraine

C-2.
The kinetic peculiarities of Pb 0.8 Ge 0.2 Te vapour growth
N. G. Bukhan’ko, L. V. Yashina, V. I. Dernovsky , Moscow State University,
Moscow, Russia

C-3.
Growth of n-i-p-i InAs structures on semi-insulaled GaAs substrates for
3-5 mkm infrared photodetectors by LP MOCVD
I. D. Zalevsky, P. V. Bulaev, A. A. Padalitza, V. M. Poltoratsky ,
Joint Stock Company "Sigma Plus", Moscow, Russia

C-4.
Interdiffusion in superlattices and multilayers
A. I. Fedorenko, A. G. Fedorov, L. P. Shpakovskaya, A. Yu. Sipatov,
Polytechnical University, Kharkov, Ukraine

C-5.
Thermodynamics of self-propagating high-temperature synthesis of ternary
scmiconductor compounds
V. G. Voevodin, O. V. Voevodina , Siberian Physical-Technical Institute at
Tomsk State University, Tomsk. Russia

C-6.
Nonstoichiometric defects and properties of IV-VI phases
E. I. Rogacheva , Polytechnical University, Kharkov, Ukraine

C-7.
Arsenic doping of mercury cadmium telluride at elevated temperatures
(400-600 ° C)
V. Savitsky, A. Vlasov, I. Malynych, L. Mansurov, A. Nemolovsky ,
Institute of Applied Physics, Lviv State University, Lviv, Ukraine

C-8.
Non-stoichiometry and doping of semiconducting materials
V. Zlomanov , Moscow State University, Moscow, Russia
A. Tkalich , Moscow Institute of Steel and Alloys, Moscow, Russia

C-9.
Liquid phase epitaxial growth of III-V quantum well strurtures from
multicomponent melts for IR optoelectronic devices
S. I. Krukovskii, Carat Scientific Prod. Ass., Lviv, Ukraine
G. N. Semenova , Institute of Semiconductor Physics, Kiev, Ukraine

C-10.
Rare-earth doping ot epitaxial InAs based alloy layers
N. V. Zotova, S. A. Karandachov, B. A. Matveev, N. M. Stus, G. N. Talalakin ,
Ioffe Physical-Technical Institute, St. Petersburgh, Russia

C-11.
Epitaxial structures based on narrow band-gap InAs 1-x-y Sb x Bi y solid solutions
P.Kh. Akchurin, V.A. Zhegalin, T.V. Sakharova , Moscow State Academy of
Fine Chemical Technology

S. V. Seregin , Institute of Chemical Problems of Microelectronics,
Yaroslavl, Russia

C-12.
High power pulse electron beam modification and ion implantation of
Hg 1-x Cd x Te epitaxial structures, growth LPE and MBE methods
A. V. Voitsekhovskii, A. P. Kokhanenko, D. A. Usherenko, G. E. Remnev,
M. S. Opekunov , Tomsk State University, Tomsk, Russia

Poster presentations

CP-I.
Thermodynamic aspects of growth and annealing of (Hg,Mn)Te/CdTe structures
S. V. Kavertsev, S. M. Komirenko, L. V. Rashkovetskii, A.E.Belyaev,
Institute of Semiconductor Physics, Kiev, Ukraine

CP-2.
Growth of epitaxial layers of lead, tin, and germanium telluride alloys doped
by group III elements
E. I. Slynko, A. P. Bahtion, M. M. Kondratenko, V. N. Vodopjanov,
Yu. K. Vygranenko, Institute of Material Science Problems, Chernivtsi, Ukraine

CP-3.
p-to-n ion beam milling conversion of specially doped Cd x Hg 1-x Te
I. I. Izhnin 1 , A. I. Izhnin 1 , K. R. Kurbanov 2 , B. B. Prytuljak 1
1 Scientific Research Centre "Carat", Lviv, Ukraine
2 Joint Stock Company "Pure Metals", Svetlovodsk, Ukraine

CP-4.
Active ultrasonic - the most simple decision of a problem of crystal quality
improvement for CdHgTe
Ya. M. Olikh , Institute of Semiconductor Physics, Kiev, Ukraine

CP-5.
Morphological features of the vapour grown IV-VI crystals
V. V. Bobinkin, K. V. Cheberyako, L. V. Yashina, D. V. Safonov,
M. V. Molchanov , V. P. Zlomanov , Moscow-State University,
Moscow, Russia

CP-6.
The investigation of Ge diffusion in SnTe crystals
T. B. Shatalova, V. B. Bobniiko, V. F. Kozlovskv, L. V. Yashina,
V. P. Zlomanov , Moscow State University, Moscow, Russia

CP-7.
Growth and investigation of PbTe films on Si(III) substrates with BaF 2 and
BaF 2 /CaF 2 intermediate buffer layers
A. Belenchuk, V. Kantser, O. Shapoval, V. Zenchenko , Institute of
Applied Physics, Chisinau, Moldova

CP-8.
Growth of SnTe thin films with controlled concentration of
nonstoichiometric defects
A. I. Fedorenko, O. N. Nashchekina, V. I. Pinegin, E. I. Rogacheva,
and L. P. Shpakovskaya, Polytechnical Universiy, Kharkov, Ukraine

CP-9.
CdTe and Cd 0.96 Zn 0.04 ,Te crystal vapour phase doping by Ge
P. I. Feichuk, L. P. Shcherbal, and I. V. Omanchukovskaya ,
Chemivtsi State University, Chernivtsi, Ukraine

CP-10.
Laser molecular beam epitaxy of BaTiO 3 thin films
D.-F. Cui, H.-S. Wang, K. Ma, Z.-H. Chen, Y.-L. Zhou, H.-B. Lu, L. Le,
G.-Z. Yang , Institute of Physics. Beijing. People’s Republic of China

CP-11.
Transformation of native and impurity defects in IV-VI allois under the
infrarcd laser treatment
S. V. Plyatsko 1 , F. F. Sizov 1 , S. Kadyshev 2 1 Institute of Semiconductor
Physics, Kiev. Ukraine. 2 Kyrgyz National University, Bishkek, Kyrgyzstan

CP-12.
Arsenic doping of mercury telluride epitaxial layers
V. Savitsky, L. Mansurov, V. Kavych, A. Nemolovsky, A. Vlasov,
M. Lozynska , Institute of Applied Physics, Lviv State University,
Lviv, Ukraine

CP-13
Doped Ga lead telluride films deposition
S. G. Dorofeev, M. E. Tamm, V. P. Zlomanov , Moscow State University,
Moscow, Russia

CP-14.
Theoretical and experimental investigations of the HgMnTe and HgCdMnTe
S. E. Ostapov, O. A. Bodnaruk, I. N. Gorbatyuk, S. V. Zolotaryov,
I. N. Rarenko , Chernivtsi State University, Chernivtsi, Ukraine

CP-I5.
The effect of self-purifcation in the p-CdTe-Gd crystals
Z. I. Zakharuk, E. S. Nikonyuk, V. L. Shlyakhovuy, M. I. Kuchma ,
Chernivtsi State University, Chernivtsi, Ukraine

CP-16.
Obtaining and photoelectric properties of Cd x Hg 1-x Se
S. Yu. Paranchych, P. N. Gorley, V. M. Makogonenko, V. R Romanuk ,
Chernivtsi State University, Chernivtsi, Ukraine

CP-17.
The interaction of metals with II-VI, III-VI, and IV-VI semicouductor compounds
V. N. Tomashik, V. I. Grytsiv, Z. F. Tomashik, O. V. Seritsan ,
Institute of Semiconductor Physics, Kiev, Ukraine

CP-18.
Electrical characteristics of porous silicon sublayer for IV-VI
semiconductors epitaxy on silicon substrates
S. P. Zimin, E. P. Komarov , Yaroslavl University, Yaroslavl, Russia

CP-19.
X-ray and rheed study of Si/SiGe strained-layer heterostructures and
superlattices grown by MBE
Yu. M. Kozyrev, V. M. Ogenko, S. A. Shevlyakov , Institute of Surface
Chemistry, Kiev, Ukraine V. I. Kladko, S. V. Plyatsko, Institute of
Semiconductor Physics, Kiev, Ukraine

CP-20.
Monocrystals Sn 2 P 2 S 6 and their analogs. Technology of growth, properties,
usage in means of information optical processing
M. I. Gurzan, S. M. Gasynets, V. I. Rizak, V. V. Petrov ,
Uzhgorod Optical Information Department of the Institute of Information
Recording Problems of NASU, Uzhgorod, Ukraine

CP-21.
Growth and properties of native oxides for IV-VI optoelectronic devices
N. N. Berchenko, A. I. Vinnikova, S. V. Fadyeev, A Y. Nikiforov ,
Lviv Polyechnic State University, Lviv, Ukraine

CP-22.
New optical materials based on cadmium telluride
A. V. Savitsky, P. P. Beisyuk, K. S. Ulyanitsky, V. R. Burachek ,
Chernivtsi State University, Chernivtsi, Ukraine

CP-23.
Real structure of Bridgman’s Pb(Cr)Te crystats
O. I. Tananaeva, V. P. Zlomanov, P. V. Verteletsky , Moscow State University,
Moscow, Russia

CP-24.
Laser deposition and characterisation of PbTe thin films for IR applications
S. V. Plyatsko 1 , J. E. Kulumbetov 2 1 Institute of Semiconductor Physics,
Kiev, Ukraine 2 Kyrgyz State University, Bishkek, Kyrgyzia

CP-25.
Metal-PbTe Interface Chemistry and the Schottky Borrier Formation
V. V. Tetyorkin, and S. V. Bunchuk , Institute of Semiconductor Physics,
Kiev, Ukraine

CP-26.
Electrical and Optical Studies ot Electron-Irradiated III-V Semiconductors
Yu. M. Azhniuk 1 , I. G. Megela 1 , D. B. Goyer 1 , A V. Gomonnai 1 ,
Ye. Yu. Brailowski 2 , 1 Institute of Electron Physics, Uzhgorod, Ukraine
2 Institute of Nuclear Research, Kiev, Ukraine



 
FOREWORD

The First Polish Ukrainian Symposium is devoted to to the urgent problem of modern power engineering — creation and improvement of new electric power sources utilizing the energy of the Sun. The Proceedings of the conference include the review lectures, covering the major directions for the creation of new silicon-based materials with the improved properties, the scientific problems of the creation of highly efficient solar cells being discussed. Another group of reports is devoted to application of solar cells, their operating parameters and the possibilities of practical use in power supply systems being reported. It is a great pleasure to note that besides Ukrainian and Polish physicists, scientists from Germany, Sweden, France, Korea also participated in the conference.

New Photovoltaic Materials for Solar Cells (Abstracts, 1st Polish-Ukrainian Symposium, Cracow, 1996, 79 pp.)
 
CONTENTS

Photovoltaics Until 2010
Ryszard Ciach (Polish Academy of Sciences, Cracow) ............... 9

Defect Evolution in Ion-Implanted Silicon
B.G.Svensson*, J.Lalita*, N.Keskitalo**, A.Hallén*,
C.Jagadish*** (*Rolyal Institut of Technology, Stockholm;
**Uppsala University;***Australian National Unversity, Canberra).10

Multiinterface Solar Cells
Z.T. Kuznicki (CNRS, Strasbourg)... ......................... ..................11

Towards Ion Beam Processed Single-Crystal Si Solar Cells with
a Very High Efficiency
Z. T. Kuznicki*, J. Thibault**, F. Chautain-Mathys**,
S. de Unamuno*, L. Wu*, S. Sidbie* (*CNRS, Strasbourg,
**CEA,Grenoble) .........................................................................12

Towards a Neural Network Modelling of Multi-Interface Solar
Cells of a d -BSF Type
Z.T. Kuznicki, O. Schmidt, J. Morel, P. Wanner, Y. Herve,
J. Korczak,J. de Azevedo, J.P. Novak, E. Dizdarevic
(CNRS, Strasbourg) ......................................................................13

Modeling of the Electronic Contribution from the Silicon
Wafer Surface and Bulk: Modifications of Single-Crystal Solar
Cells with a Low-High Homointerface
Z.T. Kuznicki, S. de Unamuno, D. Tournebize, S. Sidibe,
H. Strazynska-Kuznicki (CNRS,Strasbourg) ................................15

Electrical Fields in the Defect Semiconuctors with Potential Gap
at the Interphase Boundary
Reztsov V.F., Surjik T. V. (Academy of Sciences
of the Ukraine) ..............................................................................17

On the Problem of Creating Solar Single - Crystal Si -
Heterophotocells by the r - Transmutation Method with
Hydrogenated Neutralization of Defects.
A.N.Dovbnya, V.P.Yefimov, S.V.Yefimov (National Science
Center, Kharkov) ..........................................................................18

The Use of a Corrugated Interface to Enhancement of
Photosensitivity in a Schottky Barrier Structures for Solar Cells
Applications
N.L. Dmitruk, O.I. Mayeva, S.V. Mamikin (National Academy of
Sciences of Ukraine, Kyiv) ............................................................19

High-Efficiency GaAs-AlGaAs Heterophotocells Obtained by
LPE from Bi-Based Melt
S.I. Krukovskii (R&D Institute for Materials SRC "CARAT",
Lviv) .............................................................................................21

Parameters of the Inhomogeneous Solar Cells and the Methods
of their Examination
V.I. Strikha (National Taras Shevchenko University, Kiev)... ........22

Elaboration and Investigation of Solar Cells for Terrestrial
Application in Ukraine
V.I. Strikha (National Taras Shevchenko University, Kiev)............24

Optical Properlies of CuIn 3 Se 5 Interface Phase in CuInSe 2
Solar Cells
R. Bacewicz, J. Filipowicz (Warsaw University of Technology).....26

Energy States and Charge Inhomogeneity in Promising
Solar Energetics In 4 Se 3 Crystals
L.Yu.Kharkhalis*, D.M.Bercha*, A.I.Bercha*, M.Snaider **
(*Uzhgorod State Universily; **Pedagogical University, Rzeszow)..28

Application of DLTS Method for Studying Defect Levels in
Solar Cells Based on Cu(InGa)Se 2 ,
M. Igalson (Warsaw Unversity of Technology) ..............................29

The Layer Intercalated Crystals in Process of the Solar Energy
Transformation into Electrical Energy
C. Tovstiouk (State Politechnique University "Lvivs'ka Politechnika",
Ukraine) .......................................................................................30

Microstrucure of CuInSe 2 , Bulk Crystal Studied by Electron
Microscopy
P. DIuzewski (Polish Academy of Sciences, Warsaw)
R. Bacewicz (Technical University of Warsaw)..............................31

Intercalation Phenomenon. New Effects and Its Technical Applications
Z.D.Kovalyuk, F. V.Motsnyi (National Academy of Sciences
of Ukraine, Kyiv)..........................................................................33

Photoelectrical Properties of Indium Selenide Films
J.M.Stakhira, V.P.Savchyn . (Lviv State Ivan Franko University) .34

New Photovoltaic Elements Based on Gradient
Modulated Structures
V.T. Maslyuk (Ukrainian National Academy of Sciences,
Uzhgorod)................................................................................... 35

Photovoltaic Devices on the Base of Indium Selenide
P. M. Gorley, S. Yu. Paranchych, A. I. Savchuk, O. A. Savchuk,
I. D Stolyarchuk ..........................................................................36

Own and Admixture Photovoltaic Effects in Cadmium-Plumbum
Iodides
V.D.Bondar, I.M. Matviyishyn, S.T. Popovych, V.G. Antoniuk
(Lviv State University)...................................................................37

Physical Properties of the Layers of Cadmium and Zinc
Chalcogenides Obtained by Use of Solid-State Substitutional
Reactions Method
V. P. Makhniy, Ya. M. Barasyuk, M. M. Berezovskyi,
O. V. Makhniy, V. V. Melnik (Chernivtsi State University) ............38

The Specific Features of Low-Energy Electrons Scattering by
Silicon Surface
O.B. Shpenik (National Academv of Sciences of Ukraine,
Uzhgorod) .....................................................................................39

Silicon Solar Cells with Porous Silicon Layers
V.A.Skryshevskv, V.I.Strikha, V.A.Vikulov, A.V.Kozinetc,
A. V.Mamikin (National Shevchenko University, Kiev) A. Laugier.
(Institut National des Sciences Appliquees de Lyon).........................41

Si Structure with Microrelief Surface, Porous Layer and n + -p Junction
as Model Material for Solar Cells
R. Ciach, J. Morgiel. T. Ya. Gorbach*, P. S. Smertenko*,
S. V.Svechnikov*, V. P. Bondarenko**. A. M. Dorofeev**
(Polish Academy of Sciences, Cracow; *National Academy of
Sciences of Ukraine, Kiev; **Belarussian State University of
Informatics and Radioelectrinics, Minsk)...........................................42

Investigation of the Microcrystalline Si and SiC Phases in
Amorphous Semiconductors
L.I.Bereginskv, Nan-Ihn Cho*, Jin-Ho Oh*, P.S.Smertenko,
S. V. Svechnikov, S.I. Vlaskina* (lnstilute of Semiconductor
Physics NASU,Kiev; * Sun Moon University, Churan).....................43

X-Ray Diffraction Effects in Silicon Monocrystal with Buried
Amorphous Layer
J.T. Bonarski*. Z.Swiatek*, Z.T.Kuznicki** (* Polish Academy
of Sciences. Kraków; ** CNRS. Strasbourg)..................................44

X-Ray Diffraction Methods of Materials Research. Used in
Solar Power
I. M. Fodchuk, M. D. Raransky Chernivtsi State University,
Chernivtsi, Ukraine..........................................................................45

lnfluence of Uniform Stress on New Donors Generation in Surface
Layer of Czochralski Grown Silicon
W. Jung, A. Misiuk (Institute of Electron Technology, Warsaw;
L. Datsenko Institute of Semiconductor Physics, NAS, Kiev) ..........46

The Photovoltaic Systems
T. Zdanowicz, B. Lincrzerski (Technical University of Wroclaw).....47

Local Current - Voltage Curves Measured Thermally (LIVT):
A New Technique of Characterizing PV Cells
I. Konovalov (Shevchenko Uuiversity in Kiev) O Breitenstein and
K. Iwig (Max Planck Institurte. Weinberg).......................................48

Deposition of a-Si:H Thin Films Using Pulsed ECR Plasma
CVD for Solar Cells
Ju-Hyeon Lee*, E.Beltowska-Lehman**, P.S Smertenko,
S. V. Svechnikov, S.I. Vlaskina. * (Institute of Semiconductor Physics
NASU, Kiev; * Sun Moon University, Churan; **Polish Academy
of Sciences, Cracow). .....................................................................49

Modyfication of Polysilicon Thin Films Grain Size by Deposition
Conditions and Si + Selfimplantation.
Jerzy Morgiel, R. Sinclair * (Polish Academy of Science, Cracow;
*Stanford University).......................................................................50

Growth of Multicrystalline Silicon Ingots for Photovoltaics by
Casting Methods
S. Bednarski. M. Slepowronski (Institute of Atomic Energy,
Swrierk Otwock)............................................................................51

New Polycrystalline Photovoltaic Material and Structure for
Solar Cells
Yu.N.Bobrenko, K.V. Kolezhuk, A.V.Komashchcenko, N.O. Mai,
A.M. Pavelets, V.M. Tkachenko and G.I. Sheremetova
(National Academy of Sciences of Ukraine, Kiev-28)......................52

Magnetron Deposition of the Silicon-Carbon Films on Unheated
Si Substrates
R. Ciach*, T. Ya. Gorbach**, L. A. Matveeva**, J. Morgiel*,
S. V S vechnikov**, A. V. Vasin **, E. F. Venger **
(*Institute of Metallurgy and Materials Science,Polish Academy
of Sciences, Cracow, **Institute of Semiconductor Physics,
National Ukrainian Academy of Sciences, Kiev, Ukraine .................53

Amorphous and Polycrystalline Silicon Carbide Films Obtained by the
Plasma Chemical Method.
L.A Ivashchenko*, G.V.Rusakov*, P.S.Smertenko, S.V.Svechillkov,
S.I. Vlaskina.** (Institute of Semiconductor Physics NASU, Kiev;
*Institute for Material Sciense NASU, Kiev; **Sun Moon University,
Churan) ...........................................................................................54

Laser Solid-Phase Modifcation of Semiconductors
A. Bonchik, S. Kiyak, A. Pokhmurska, G. Savitsky
(National Academy of Science of Ukraine, Lviv) ................. ............55

The Transition Processes at Photobattery Putting on the
Active-Reactve Loading
A.Razak, V.F.Reztsov, V.I.Shevchuk, T. V.Surjik .
(Academy of Sciences of the Ukraine) ............................................ 56

Perspective Materials for Photo Electronic: Chalcogenide:
Chalcogenide of Thallium
E.Yu Peresh, M.Yu Szabo . (Uzhgorod State University) ..................57

Solar Cells with Field-Induced and Diffusion Junctions
A.P. Gorban (National Academy of Sciences of the Ukraine)..........58

Silicon Solar Cells with Thick-Film Metallization
Marek Lipinski (Polish Academy of Sciences, Kozy)......................60

Polycrystalline Thin-Layered Oxides, Sulphides and Selenides of
Metals for Solar Cells
W. Sienicki, T. Hryniewicz (Technical University of Koszalin)..........61

Improvement of Solar Cell Efficiency by Deposition of Antireflecting
Diamond-Like Carbon Films
N.I.Klyui, V.A.Semenovich, V.P.Kostylyov, V.G.Litovchenko and
V V. Chernenko (National Academy of Sciences of Ukraine, Kiev) ..63

Diamond-Like Carbon Films as Protective Coatings for Cosmic
Space Solar Cell Application
V.A. Semenovich, N.I.Klyui, V.G.Litovchenko, V.P.Kostylyov,
and B.N. Romanyuk (National Academy of Sciences of Ukraine, Kiev)..64

New Stimulated Gettering Technology for Solar Cell Fabrication
V.G.Litovchenko, B.N.Romanyuk, V.G.Popov (Ukrainian National
Academy of Sciences, Kiev)..................................................................65

Layers of Laser Modificated Si for Solar Cells
S.V. Svechnikov, E.B.Kaganovich, E.G.Manoilov, S.P.Dikiy
(National Academy of Sciences, Ukraine)..............................................66

Peculiarities of Operation of Solar Cells in the Space Concentrator
Solar Arrays
V.S. Gladilin*, S.V. Medvednikov*, I.N. Statsenko**,
L.F.Khloponina** (*Yuzhnoye State Design Office, Dnepropetrovsk;
**Dnepropetrovsk State University)......................................................68

The Experimental Base for Solar Elements Testing at the Conditions
Simulating the Outer Space
A.N. Zavilopulo, A.V. Snegursky (Institute of Electron hysics)..............69

Basic Requirements to the Perspective Solar Cells for Space Application
V.I.Dranovsky, D.G.Belov, I.T.Perekopsky, V.S.Gladilin,
S. V. Medvednikov (Yuzhnoye State Design Office, Dnepropetrovsk) ..71

Possibilities of Silicon Solar Cells Production from the Industrial
Waste of Integral Electronics at the PA "Graviton" and Chernivtsi
State University Laboratories
A. Liashenko, I. Rarenko, V. Shlapak (Chernivtsi State University)......72

Evolution of Grain Boundary’s Resistance and Electrical Noise in
Polycrystalline Silicon Under Electrical Stress
M. M. Tkachenko (Zaporizhzhia State Engineer Academy) ..................73

Influence of Internal and External Surfaces on Characteristics
of Solar Cell on the Basis of Casted Polycrystalline Silicon
M. M. Tkachenko (Zaporizhzhia State Engineer Academy.
Zaporizhzhia) ......................................................................................75

Titanium Nitrate Contact System for Silicon Photoelectric Converters
A.N. Schmyrva, N.S. Bisheva (Polyrtechnology Institute. Kiev) .........77

Non-Reversible Thermo- and Photostructural Relaxation in
Newly-Made Thin Layers of As-S
D.Semak, A.Povkhan (Uzhgorod State University)............................78

Some Aspects of Photovoltaics in Poland
R. Ciach*, Z.T. Kuznicki**, M. Lipinski***, E. Sheregii****
(*Polish Academy of Sciences, Cracov; **Laboratoire PHASE,
CNRS, Strasbourg: ***Polish Academy of Sciences, Kozy;
****Pedagogical University. Rzeszóv) ..............................................79


Back Main Page Year 1997





viagra